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Temel_Elektronik
 15-06-2018

2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Sipariş  ettiğim transistörlerden biri. 1.2 W gücünde.

Datasheet:

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 3.0 V

Collector Current IC 100 mA

Total Power Dissipation PT* 1.2 W

Thermal Resistance Rth(j-a)* 62.5 °C/W

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C * mounted on 16 cm2 × 0.7 mm Ceramic S

ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µA VEB = 1.0 V, IC = 0 DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA Gain Bandwidth Product fT 6.5 GHz VCE = 10 V, IC = 20 mA Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain S21e2 9 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz

 

 

2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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